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Oxidative diffusion LPCVD furnace (R&D type)

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Performance：

◆Features: Compact structure with small footprint, flexible and convenient modular combination

◆Process: oxidation, diffusion, annealing, LPCVD, PECVD, etc

◆2-12 inch wafer process, 5-25 pieces/batch

◆Small footprint, horizontal 1-4 pipes/unit

◆200～1300℃，1400℃/2200℃(High temperature)

◆Manual and automatic boat entry, local purification

 Supporting process：

◆Diffusion: Gaseous/Liquid/Solid Source Phosphorus Boron Diffusion

◆Oxidation: Dry/Wet Oxygen (DCE, HCL) (H2O/Hydrogen Oxygen Synthesis)

◆Nitrogen/hydrogen annealing and rapid annealing, sintering, alloys, etc

 ◆LPCVD:Polycrystalline silicon, silicon nitride, silicon oxide（PSG\BPSG，TEOS,LTO\HTO）、SIPOS

◆PECVD:Silicon nitride, silicon oxide, etc

◆Special processes: diffusion of aluminum and gallium, LP POCl3 diffusion, etc.

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