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Oxidative diffusion LPCVD furnace

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Performance：

 ◆4～8Inch wafer process，1～4/5pipe

 ◆Constant temperature zone：800/1000/1250mm

 ◆temperature：200～1000℃

 ◆A high-precision and reliable automatic pressure control system

 ◆A high-precision and reliable automatic pressure control system

 ◆Automatic wafer flipping, complete factory MES system integration, compliant with SECS II/HSMS/GEM standards

 Supporting process：

 ◆Supporting processes include dry and wet oxidation, diffusion, annealing, alloy activation, LP-POCl3 diffusion, gallium aluminum diffusion, etc

 ◆LP Polycrystalline silicon P-Si, silicon nitride Si3N4, silicon oxide SiO2

 ◆LP phosphorus silicon glass PSG, boron phosphorus silicon glass BPSG

 ◆LP TEOS，LTO，HTO，SIPOS...

 ◆PE Silicon nitride, silicon oxide, etc.

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