Graphene CVD Furnace

Graphene CVD Furnace

Horizontal LPCVD is a specialized equipment for high-quality and large-scale graphene CVD growth, with various process gases, growth pressures, process temperatures, and fully automated computer control of the process. This device can also be used for other large substrate LPCVD film deposition processes.

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High temperature oxidation furnace (1500)

High temperature oxidation furnace (1500)

The 1350/1500 ℃ high-temperature oxidation furnace system is used for special processes such as high-temperature oxidation of 2 "4" 6 "SiC or Si crystal wafers.

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High temperature annealing furnace (2200)

High temperature annealing furnace (2200)

Special processes for high-temperature annealing, activation, etc. of 2 "4" 6 "SiC or GaN.

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HVPE Hydride Gas Phase Epitaxy

HVPE Hydride Gas Phase Epitaxy

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HVPE - Horizontal

HVPE - Horizontal

Horizontal HVPE equipment is used for epitaxial growth of GaN thin films, Ga2O3 thin films, thick films and crystal growth on substrates such as sapphire and silicon carbide, as well as epitaxial growth of AlN.

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HVPE - Vertical

HVPE - Vertical

Vertical HVPE equipment is used for epitaxial growth of GaN thin films, Ga2O3 thin films, thick films and crystal growth on substrates such as sapphire and silicon carbide, as well as epitaxial growth of AlN.

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