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Fully automatic oxidation diffusion LPCVD furnace

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Performance：

 ◆Fully automatic：Box to box（Cassette To Cassette）

 ◆Modular design, SEMI standard

 ◆Meet the 4-8/12 inch wafer process

 ◆1-4/5 tubes per unit, quartz/SiC reaction tubes

 ◆Constant temperature zone：800/1000/1250mm

 ◆Temperature：200～1300℃/1350℃

 ◆Fully automatic robotic arm loading and unloading, cantilever/soft landing

 ◆High integration, complete factory MES system integration

 Supporting process：

 ◆Diffusion furnace：Gas/liquid/solid source phosphorus boron diffusion

 ◆Oxidizer：Dry oxygen/wet oxygen（DCE，HCL）

 ◆Nitrogen and hydrogen annealing, sintering, alloying, curing, etc

 ◆Gallium and aluminum diffusion,LP POCl3

 ◆LPCVD Technology ：Polycrystalline silicon P-Si, silicon nitride Si3N4, silicon oxide SiO2, phosphorus silicon glass PSG, boron phosphorus silicon glass BPSG, TEOS, LTO, HTO, SIPOS...

 ◆PECVD Technology ：Silicon nitride, silicon oxide, etc.


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